K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.

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The addressing should be done in sequential order in a block.

This two-step sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external noise conditions. A page program cycle consists of a serial data loading period in which up to bytes X8 device or words X16 device of data may be loaded into the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.

K9F2G08U0M-PCB0 – SAMSUNG – Memory – Kynix Semiconductor

Auto-page read function is enabled only when PRE pin is tied to Vcc. Refer to Figure 15 below. The number of valid blocks is presented with both cases of invalid blocks considered. Add the data protection Vcc guidence for 1. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet.

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Five read cycles sequentially output the manufacturer code EChand the device code and XXh, 4th cycle ID, 50h respectively. C Vcc Vss N. The contents of memory cells being altered are no datawheet valid, as the data will dataasheet partially programmed or erased. The memory array is made up of 32 cells that are serially connected to form a NAND structure.

K9F2G08U0M Datasheet(PDF) – Samsung semiconductor

The invalid block s status is defined by the 1st byte X8 device or 1st word X16 device in the spare area. A block consists of two NAND structured strings. Flow chart to create invalid block table.

Any intentional erasure of the original invalid block information is k9f2g080m. The M byte X8 device or M word X16 device physical space requires 29 X8 or 28 X16 addresses, thereby requiring datwsheet cycles for addressing: A program operation can be performed in typical ? AC Waveforms for Power Transition 1. Optical Inspection Equipment AA The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page.


The Program Confirm command 10h is required to actually begin the programming operation. Invalid blocks are defined as blocks that contain one or more bad bits. Pb-free Package is added.

This operation is also initiated by writing 00hh to the command register along with five address cycles. When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays dtaasheet seller after confirming you have received your order. For this reason, two bit ECC is recommended for copy-back operation.


The system k9f2g08u0mm must be able to mask out the invalid block s via address mapping. Any undefined command inputs are prohibited except for above command set of Table 1. The device supports random data input in a page. Devices with invalid block s have the same quality level as devices with all valid blocks and have the same AC and DC k9f2g08y0m. Data in the data page can be read out at 50ns 30ns, only X8 device cycle time per byte datasneet word X16 device. When the next set of data is inputted with the Cache Program command, tCBSY is affected by the progress of pending internal programming.

Only the Read Status command and Reset command are valid while programming is in progress. Exposure to absolute maximum rating conditions for extended periods may affect reliability. The K9F2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.