DS1225Y DATASHEET PDF

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SEMICONDUCTOR. DSY. 64K Nonvolatile SRAM. PIN ASSIGNMENT. FEATURES. 10 years minimum data retention in the absence of external power. CC. DSY Datasheet, DSY 64k Nonvolatile SRAM Datasheet, buy DSY DSY datasheet, DSY pdf, DSY data sheet, datasheet, data sheet, pdf, Dallas Semiconductor, 64K Nonvolatile SRAM.

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All voltages are referenced to ground. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

BB designates the week of manufacture. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high-impedance state during this period. WE is high for a read cycle. WE is high for a read cycle.

DSY Datasheet(PDF) – Dallas Semiconductor

If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high impedance state during this period. The OE control signal should be kept inactive high during write cycles to avoid bus contention.

All voltages are referenced to ground. Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery backup mode.

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During power—up, when VCC rises above approximately 3. As VCC falls below approximately 3.

Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. AA designates the year of manufacture. All AC and DC electrical characteristics are vatasheet over the full operating temperature range. The write cycle is terminated by the earlier rising edge of CE or WE. The unique address specified by the 13 address inputs A0-A12 defines which of the bytes of data is to be accessed.

DSY+ Maxim | Ciiva

The latter occurring falling edge of CE or WE will determine the start of the write cycle. All address inputs must be kept valid throughout the write cycle. During power-up, when VCC ds122y5 above approximately 3. If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle 1, the output buffers remain in a high impedance state during this period. AA designates the year of manufacture. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

All address inputs must be kept valid throughout the write cycle. Valid data will be available to the eight data output drivers within tACC Access Time after the last address input signal is stable, providing that CE and OE access times are also satisfied.

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All AC and DC electrical characteristics are valid over the full operating temperature range. Dataasheet such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

Exposure to absolute maximum rating conditions for extended ds122y of time may affect reliability. The expected tDR is defined as starting at the date of manufacture. The expected tDR is defined as starting at the date of manufacture. The OE control signal should be kept inactive high during write cycles to avoid bus contention. Data is maintained in the absence of VCC without any additional support circuitry.

Valid data will be available to the eight data output drivers within tACC Access Time after the last address input signal is stable, providing that CE and OE access times are also satisfied.

Dataheet drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status.

DS1225Y-150IND

Why bother to spell words correctly. Darasheet a power down condition the voltage on any pin may not exceed the voltage on VCC. Storage Temperature Lead Temperature soldering, 10s Note: