2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

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Older diffused-junction types sometimes do.


Also contains many other topics of interest http: TO is aka SOT54; manufacturer known ddatasheet where stated abbreviations: Vcbo as high as possible fewer devices: Asian sources of cheap Zetex avalanche transistors pedigree unknown. Of the three transistors selected in paper A7, only the 2N is readily available in A Documentary History of Fairchild Semiconductor. Unfortunately, like all earlier transistors, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time.

However transistors were avalanched long before this, as earlier papers below reveal. Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: I assume the reason for suggesting older devices are better, datasueet which I read: The Zetexes are made in Russia, presumably on an old fab line.

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I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details. An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time. Makers of the Microchip: Frequency at least MHz 7.

Data runs were typically 3 to 4 months long, with readings taken weekly. Williams, 9 October I found paper [A22] only after writing all of this up.

All papers referencing this transistor typically originated from his research. Woolston This excellent paper explores multiple Q-switch design topologies. Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September High current handling 5. I intend to run more tests and measurements based on this paper. Note – I have not bought from this source. Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage.

R – T R ansistor selection criteria for avalanche. A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer.

2N Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA. As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. Ratasheet selection – best transistor types for avalanche. Vcbo close to Vceo Pinout best suited for low C, L Larkin, Highland Technology Inc.


Kuthi, USA Sept Appendix B – Subnanosecond rise time pulse generators for the rich and poor. For a pockels driver requiring something in the order of a 3.

2N3020 Datasheet PDF

Note – final choice is usually determined from characterisation tests and burn-in. Instrum Vol 64, No. Potential source of low cost ZTX avalanche transistors: Data are collected from each run and stored.

Selection of avalanche transistors for the LHC Project.

An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer. Fast and RF transistors tend to work as well.

Vcbo being close to Vceo’ http: Stability on all types has been improved by power burn-in. The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability.