12N60 DATASHEET PDF

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It is designed to have Better characteristics, such as fast switching time, low gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and 1. Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2. The transistor can be used in various 1. The parties hereto are for all purposes of this Agreement independent contractors, and neither shall hold itself out as having any authority to act as an agent or partner of the other party, or in any way bind or commit the other party to any obligations.

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The transistor can be used in various po 1. Except as expressly permitted in this Agreement, Licensee shall not use, modify, copy or distribute the Content or Modifications.

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12N60 Datasheet PDF –

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The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-sta 1. It is mainly suitable for active power factor correction and switching mode power supplies. Licensee agrees that it has received a copy of the Content, including Software i.

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12N60 MOSFET. Datasheet pdf. Equivalent

This latest technology has been especially designed to minimize on-state resistance h 1. Within 30 days after the termination of the Agreement, Licensee shall furnish a statement certifying that all Content and related documentation have been destroyed or returned to ON Semiconductor.

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12N60 Datasheet

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