EPROM Datasheet, 16K EPROM Datasheet, buy MF1 NMOS uv EPROM: 8kx8. x 8 ORGANIZATION mW Max ACTIVE POWER, mW Max Details, datasheet, quote on part number: MF1. The NTE is a 16,–bit ( x 8–bit) Erasable and Electrically . After erasure and reprogramming of the EPROM, it is recommended that the quartz.

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EPROM Technical Data

The MME is packaged in a pin dual-in-line package with transparent lid. The table of “Electrical Characteristics” provides conditions for actual device operation. Except for “Operating Temperature Range” they are not meant to imply that the devices should be operated at these limits. Full text of ” IC Datasheet: Table II shows the 3 programming modes. The distance from lamp to unit should be maintained at 1 inch. All input voltage levels, including the program pulse on chip-enable are TTL compatible.

Direct sunlight any intense light can cause temporary functional fail- ure due to generation of photo current. A new pattern can then be written into the device by following the programming procedure. Transition times S 20 ns unless noted otherwise. Multiple pulses are not needed but will not cause device damage.

The MME to be erased should be placed 2176 inch away from the lamp and no filters should be used. An opaque coating paint, tape, label, etc. Programmers, components, and system designs have been erroneously suspected when incom- plete erasure was the basic problem. Lamps lose intensity as they age. Extended epromm sure to room level fluorescent lighting will also cause erasure.

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The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. Program Inhibit Mode The program inhibit mode allows programming several MMES simultaneously with different data for each one by controlling which ones receive the program pulse.

An erasure system should be calibrated periodically. This is done 8 bits a byte at a time.

Full text of “IC Datasheet: EPROM – 1”

It is recommended that the MME be kept out of direct datasheef. Any individual address, a sequence of addresses, or addresses chosen at random may be programmed. All similar inputs of the MME may be par- alleled. All bits will be at a “1” level output high in this initial state and after any full erasure.

No pins should be left open. After the address and data signals are stable the program pin is pulsed from VI L to VIH with datashest pulse width between 45 ms and 55 ms.

2716 – 2716 16K EPROM Datasheet

When a lamp is changed, the distance is changed, or the lamp is aged, the system should be checked to make certain full erasure is occurring. Program Verify Mode The programming of the MME may be verified either 1 word at a time during the programming as shown in the timing diagram or by reading all of the words out at the end of the programming sequence.


The programming sequence is: Capacitance Is guaranteed by periodic testing. The UV content of sunlight may cause a partial erasure of some bits in a relatively short period of time. These are shown in Table I. Search the history of over billion web pages on the Internet. The erasure time is increased by the square of the distance if the distance is doubled the erasure time goes up by epro factor of 4.

In- complete erasure will cause symptoms that can be misleading. Typical conditions are for operation at: This exposure discharges the floating gate to its initial state through induced photo current. Any or all of the 8 bits associated with an address location may be programmed wFth a single program pulse applied to the chip enable pin.

MMES may be programmed in parallel with the same data in this mode.

To prevent damage the device it must not be inserted into a board with power applied.