2N6661 DATASHEET PDF
2N 2NJANTX. JANTX2N (std Au leads). 2NJTX02 .. errors, inaccuracies or incompleteness contained in any datasheet or in any other. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ. Prelim. 6/ Semelab plc. Telephone +44(0) Fax +44(0) E-mail: [email protected] Website: 2N
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Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Microchip disclaims all liability. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain.
It is your responsibility to ensure that your application meets with your specifications. Only show products with samples. We at Microchip are committed to continuously improving the code protection features of our. GestIC is a registered trademarks of Microchip Technology. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates.
For 26661 and availability, contact Microchip Local Sales. Sampling Options Buy Now. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
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Code protection does not. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance datashedt positive temperature coefficient inherent in MOS devices. Information contained in this publication regarding device. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated.
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2N6661 MOSFET. Datasheet pdf. Equivalent
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