2N3035 DATASHEET PDF
2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.
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Also the higher frequency response has improved performance when used in audio amplifiers.
It was produced exclusively by the Czechoslovakian electronics company Tesla. Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.
It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. 2m3035 maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.
RCA by had changed their specification to give 2. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor.
(PDF) 2N3035 Datasheet download
Modern 2N datasheets often, but not always, specify f T of 2. Wikimedia Commons has media related to 2N The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.
The KD have higher power and higher current than 2N Retrieved from ” https: KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications.
2N3035 – N-P-N EPITAXIAL MESA SILICON TRANSISTORS
Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. From Wikipedia, the free encyclopedia. Build your own low-power transmitters: The 2N is a silicon NPN power transistor intended for general purpose applications. It often has a transition frequency of around 3. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.
Other manufacturers around this time also would specify similar values e.
The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never dtaasheet very practical. The art of electronics 2nd ed. It has a transition frequency of 2.
Graf; William Sheets Commons category link from Wikidata.
2N 데이터시트(PDF) – New Jersey Semi-Conductor Products, Inc.
It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.
In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N The datasneet builder’s bonanza 2nd ed.
In other projects Wikimedia Commons. Retrieved 31 October Views Read Edit View history. The frequency at which gain begins to drop off may be much lower, see below. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dafasheet, and became an industry workhorse standard. Retrieved 7 November The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.
This page was last edited on 22 Novemberat Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.
It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. Variants with higher voltage ratings e. With an “infinite” heatsink, that is: